ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
Conference paper
Publications
34 results for Wanki Kim
A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization
- Sangbum Kim
- Norma Sosa
- et al.
- 2016
- IEEE T-ED
PaperA Double-Data-Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read-Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
- H. Lung
- C. Miller
- et al.
- 2016
- IMW 2016
Conference paperA novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application
- W. Chien
- Yung-Han Ho
- et al.
- 2015
- VLSI Technology 2015
Conference paperNovel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
Conference paperCrystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
Conference paperNVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Conference paperStrained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Conference paperStrained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Conference paperTowards the integration of both ROM and RAM functions phase change memory cells on a single die for system-on-chip (SOC) applications
- H. Lung
- Matthew BrightSky
- et al.
- 2014
- VLSI Technology 2014
Conference paper