Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
Paper
Publications
42 results for Deborah Neumayer
Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
- M. Copel
- R.P. Pezzi
- et al.
- 2006
- Applied Physics Letters
PaperElectron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
PaperHydrogen plasma effects on ultralow-k porous SiCOH dielectrics
- A. Grill
- V. Sternhagen
- et al.
- 2005
- Journal of Applied Physics
PaperFrequency response of top-gated carbon nanotube field-effect transistors
- Dinkar V. Singh
- Keith A. Jenkins
- et al.
- 2004
- IEEE TNANO
PaperStructure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
- Alfred Grill
- Deborah A. Neumayer
- 2003
- Journal of Applied Physics
PaperCarbon nanotubes as potential building blocks for future nanoelectronics
- J. Appenzeller
- R. Martel
- et al.
- 2002
- Microelectronic Engineering
Conference paperControl of bismuth volatility in SBT by vanadium doping
- Robert Barz
- Deborah A. Neumayer
- et al.
- 2000
- International Symposium on Integrated Ferroelectrics 2000
Conference paperElectrodes and barriers for dram and feram: Processing, integration, and fundamentals
- K.L. Saenger
- P.C. Andricacos
- et al.
- 2001
- MRS Online Proceedings Library
Conference paperEffective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering
- Massimo V. Fischetti
- Deborah A. Neumayer
- et al.
- 2001
- Journal of Applied Physics
Paper