Wafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- ISSWB 2014
Conference paper
Publications
23 results for Emanuele Uccelli
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
PaperIII/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014
Conference paperCo-integrating high mobility channels for future CMOS, from substrate to circuits
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- IPRM 2014
Conference paperNanoscale physics and defect state chemistry at amorphous-Si/In 0.53Ga0.47As interfaces
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- Journal of Physics D: Applied Physics
PaperIntegration of GaAs on Ge/Si towers by MOVPE
- A.G. Taboada
- T. Kreiliger
- et al.
- 2013
- MRS Spring Meeting 2013
Conference paperThree-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires
- Pierre Corfdir
- Barbara Van Hattem
- et al.
- 2013
- Nano Letters
PaperCharge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy
- Pierre Corfdir
- Barbara Van Hattem
- et al.
- 2013
- Applied Physics Letters
PaperScalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
Conference paperHeterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
Paper