Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Conference paper
Publications
72 results for Stephen M. Gates
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Conference paperComprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Conference paperThe study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2003
- MRS Proceedings 2003
Conference paperIn Situ Determination of the Effects of CO2 and Other Volatile Impurities on YBa2Cu3O7_x
- C. Michael Greenlief
- Joseph F. Bringley
- et al.
- 2002
- Chemistry of Materials
PaperSilicon Chemical Vapor Deposition One Step at a Time: Fundamental Studies of Silicon Hydride Chemistry
- Joseph M. Jasinski
- Stephen M. Gates
- 2002
- Accounts of Chemical Research
PaperCharacterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep
- S. Cohen
- J.C. Liu
- et al.
- 1999
- MRS Spring Meeting 1999
PaperCharacterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep
- S. Cohen
- J.C. Liu
- et al.
- 1999
- MRS Spring Meeting 1999
Conference paperProspect for active matrix displays on plastic
- S. Gates
- 1997
- MRS Spring Meeting 1997
Conference paperEtching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films
- C.M. Chiang
- S. Gates
- et al.
- 1997
- Journal of Physical Chemistry B
Paper