Observation and modeling of polycrystalline grain formation in Ge 2Sb 2Te 5
- Geoffrey W. Burr
- Pierre Tchoulfian
- et al.
- 2012
- Journal of Applied Physics
Paper
Publications
17 results for Alvaro Padilla
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
- R.S. Shenoy
- K. Gopalakrishnan
- et al.
- 2011
- VLSI Technology 2011
Conference paperVoltage polarity effects in Ge2Sb2Te 5-based phase change memory devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2011
- Journal of Applied Physics
PaperEvidence of crystallization-induced segregation in the phase change material Te-rich GST
- Anthony Debunne
- Kumar Virwani
- et al.
- 2011
- JES
PaperThe inner workings of phase change memory: Lessons from prototype PCM devices
- Geoffrey W. Burr
- Alvaro Padilla
- et al.
- 2010
- GLOBECOM 2010
Workshop paperVoltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Conference paperPhase change memory technology
- Geoffrey W. Burr
- Matthew J. Breitwisch
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Paper