SMT and enhanced SPT with Recessed SD to improve CMOS Device Performance
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- ICSICT 2008
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37 results for Huiling Shang
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
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- 2008
- ICSICT 2008
Conference paperGate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
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- 2008
- IEEE T-DMR
PaperHigh performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
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- 2007
- VLSI Technology 2007
Conference paperCharacterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology
- Xiaobin Yuan
- Jae-Eun Park
- et al.
- 2007
- IIRW 2007
Conference paperInvestigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
- et al.
- 2006
- VLSI Technology 2006
Conference paperTemperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge
- Steven J. Koester
- Martin M. Frank
- et al.
- 2006
- ISTDM 2006
Conference paperHigh mobility strained Ge / SiGe PMOSFETs for high performance CMOS
- Huiling Shang
- J.O. Chu
- et al.
- 2006
- ECS Meeting 2006
Conference paperHafnium oxide gate dielectrics on sulfur-passivated germanium
- Martin M. Frank
- Steven J. Koester
- et al.
- 2006
- Applied Physics Letters
PaperA low voltage SANOS nonvolatile semiconductor memory (NVSM) device
- Yijie Zhao
- Xiaonan Wang
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- 2006
- Solid-State Electronics
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