Germanium channel MOSFETs: Opportunities and challenges
- Huiling Shang
- Martin M. Frank
- et al.
- 2006
- IBM J. Res. Dev
Review
Publications
37 results for Huiling Shang
A low voltage SANOS nonvolatile semiconductor Memory (NVSM) device
- Yijie Zhao
- Xiaonan Wang
- et al.
- 2005
- ISDRS 2005
Conference paperMobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
Conference paperOn the scalability and carrier transport of advanced CMOS devices
- Meikei Ieong
- Leland Chang
- et al.
- 2005
- ICICDT 2005
Conference paperScaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Conference paperSelectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
Conference paperFabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
- et al.
- 2004
- ICSICT 2004
Conference paperUltrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperChannel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Conference paperSelf-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
Paper