Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectrics
- S.V. Nitta
- S. Purushothaman
- et al.
- 2005
- AMC 2005
Conference paper
Publications
35 results for Nancy Klymko
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paperInvestigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
- Qiqing Ouyang
- Min Yang
- et al.
- 2005
- VLSI Technology 2005
Conference paperImpact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperOptimization of SiCOH dielectrics for integration in a 90 nm CMOS technology
- A. Grill
- D. Edelstein
- et al.
- 2004
- IITC 2004
Conference paperReliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Conference paper90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004
Conference paperComprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Conference paper