Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Paper
Publications
76 results for Nestor Bojarczuk
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Conference paperAtomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
- S. Guha
- E. Cartier
- et al.
- 2000
- Applied Physics Letters
PaperThermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy
- D.J. Kim
- D.Y. Ryu
- et al.
- 2000
- Journal of Applied Physics
PaperTransplanted Si films on arbitrary substrates using GaN underlayers
- Supratik Guha
- Arunava Gupta
- et al.
- 2000
- Applied Physics Letters
PaperAdmittance spectroscopy of Mg-doped GaN grown by molecular beam epitaxy using RF nitrogen sources
- D.J. Kim
- D.Y. Ryu
- et al.
- 1999
- Journal of the Korean Physical Society
PaperSelective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2
- S. Guha
- N.A. Bojarczuk
- et al.
- 1999
- Applied Physics Letters
PaperGallium nitride based LEDs on silicon substrates
- N.A. Bojarczuk
- S. Guha
- 1999
- Proceedings of SPIE - The International Society for Optical Engineering
Conference paperUltraviolet and violet GaN light emitting diodes on silicon
- Supratik Guha
- Nestor A. Bojarczuk
- 1998
- Applied Physics Letters
PaperMulticolored light emitters on silicon substrates
- Supratik Guha
- Nestor A. Bojarczuk
- 1998
- Applied Physics Letters
Paper