GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
- S. Guha
- N.A. Bojarczuk
- 1997
- Electronics Letters
Paper
Publications
76 results for Nestor Bojarczuk
Hybrid organic-inorganic semiconductor-based light-emitting diodes
- S. Guha
- R. Haight
- et al.
- 1997
- Journal of Applied Physics
PaperMg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
- S. Guha
- N.A. Bojarczuk
- et al.
- 1997
- Applied Physics Letters
PaperHybrid organic-inorganic GaN LED based color downconversion for displays
- S. Guha
- N.A. Bojarczuk
- et al.
- 1997
- IEE/LEOS Summer Topical Meetings 1997
Conference paperMicrostructure of AlGaAs-oxide heterolayers formed by wet oxidation
- S. Guha
- F. Agahi
- et al.
- 1996
- Applied Physics Letters
PaperSurface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy
- S. Guha
- N.A. Bojarczuk
- et al.
- 1996
- Applied Physics Letters
PaperElectronic and structural properties of the selectively wet-oxidized AlAs-GaAs interface
- J.A. Kash
- S. Guha
- et al.
- 1996
- CLEO 1996
PaperInterface recombination at the selectively wet-oxidized AlAs-GaAs interface
- J.A. Kash
- B. Pezeshki
- et al.
- 1995
- LEOS 1995
Conference paperRecombination in GaAs at the AlAs oxide-GaAs interface
- J.A. Kash
- B. Pezeshki
- et al.
- 1995
- Applied Physics Letters
PaperMagneto-optical studies of Sm(Fe,Ti)12 perpendicular textured sputtered films
- F.J. Cadieu
- A. Navarathna
- et al.
- 1993
- Journal of Applied Physics
Paper