Low RESET Current Mushroom-Cell Phase-Change Memory Using Fiber-Textured Homostructure GeSbTe on Highly Oriented Seed Layer
- Guy M. Cohen
- Amlan Majumdar
- et al.
- 2024
- physica status solidi RRL
Paper
Publications
85 results for Matthew BrightSky
State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
- Michelle Cheng
- Zhi-Lun Liu
- et al.
- 2024
- VLSI Technology and Circuits 2024
Conference paperA Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications
- Wei-Chih Chien
- Jeffrey Zheng
- et al.
- 2024
- VLSI Technology and Circuits 2024
TalkAs-Se-Ge-S and Ge-N Heterostructures for Superior OTS Performance
- A. Grun
- Z.L. Lui
- et al.
- 2024
- IMW 2024
Conference paperA Novel Program-verify Free and Low Drift Multi-level Operation on Cross-point OTS-PCM for In-Memory Computing Application
- W.C. Chien
- C.L. Sung
- et al.
- 2024
- IMW 2024
Conference paperIn-Memory Compute Chips with Carbon-based Projected Phase-Change Memory Devices
- G.S. Syed
- K. Brew
- et al.
- 2023
- IEDM 2023
Conference paper1T1R mushroom PCM cell device using epitaxial GeSbTe
- Guy Cohen
- Amlan Majumdar
- et al.
- 2023
- E\PCOS 2023
TalkA Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Conference paperMaterials Design of OTS Selectors and Phase-Change Materials for 3D Cross-point Memory Technology
- Michelle Cheng
- Wei-Chih Chien
- et al.
- 2023
- MRS Spring Meeting 2023
Invited talkNew Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Conference paper