Integrated on-chip inductors with electroplated magnetic yokes (invited)
- Naigang Wang
- Eugene J. O'Sullivan
- et al.
- 2012
- Journal of Applied Physics
Paper
Publications
147 results for William Gallagher
Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)
- J.Z. Sun
- P.L. Trouilloud
- et al.
- 2012
- Journal of Applied Physics
PaperRacetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011
Conference paperSpin-torque switchable perpendicular magnetic junctions for solid-state memory
- Jonathan Z. Sun
- R.P. Robertazzi
- et al.
- 2011
- DRC 2011
Conference paperEffect of subvolume excitation and spin-torque efficiency on magnetic switching
- Jonathan Z. Sun
- R.P. Robertazzi
- et al.
- 2011
- Physical Review B - CMMP
PaperDemonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
PaperHigh temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
- M. Tofizur Rahman
- Andrew Lyle
- et al.
- 2011
- Journal of Applied Physics
PaperEmerging nonvolatile magnetic memory technologies
- William J. Gallagher
- 2010
- ICSICT 2010
Conference paperSwitching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
Conference paperA study of write margin of spin torque transfer magnetic random access memory technology
- Tai Min
- Qiang Chen
- et al.
- 2010
- IEEE Transactions on Magnetics
Paper