Publications

6 results for W. Kong

0.026μm² high performance Embedded DRAM in 22nm technology for server and SOC applications
- - C. Pei
  - G. Wang
  - et al.
- 2014
- IEDM 2014
Conference paper
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- - S. Narasimha
  - P. Chang
  - et al.
- 2012
- IEDM 2012
Conference paper
A 0.039um² high performance eDRAM cell based on 32nm high-K/metal SOI technology
- - Nauman Z. Butt
  - Kevin McStay
  - et al.
- 2010
- IEDM 2010
Conference paper
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- - G. Wang
  - D. Anand
  - et al.
- 2009
- IEDM 2009
Conference paper
Analysis of retention time distribution of embedded DRAM - A new mMethod to characterize across-chip threshold voltage variation
- - W. Kong
  - P. Parries
  - et al.
- 2008
- IEEE ITC 2008
Conference paper
A 0.127 μm² high performance 65 nm SOI based embedded DRAM for on-processor applications
- - G. Wang
  - K. Cheng
  - et al.
- 2006
- IEDM 2006
Conference paper