Noise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
Conference paper
Publications
50 results for Greg Freeman
A 4.2-ps ECL ring-oscillator in a 285-GHz f MAX SiGe technology
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2002
- IEEE Electron Device Letters
Paper40-Gb/s circuits built from a 120-GHz f T SiGe technology
- Greg Freeman
- Mounir Meghelli
- et al.
- 2002
- IEEE Journal of Solid-State Circuits
Conference paperSelf-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
Paper50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
PaperNoise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
PaperSilicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- S. Subbanna
- L. Larson
- et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
PaperHBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 1999
- IMS 1999
PaperHBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 2000
- RFIC 2000
Conference paperManufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- IEDM 1996
Conference paper