Noise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
Conference paper
Publications
26 results for B. Jagannathan
A 4.2-ps ECL ring-oscillator in a 285-GHz f MAX SiGe technology
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2002
- IEEE Electron Device Letters
Paper40-Gb/s circuits built from a 120-GHz f T SiGe technology
- Greg Freeman
- Mounir Meghelli
- et al.
- 2002
- IEEE Journal of Solid-State Circuits
Conference paperSelf-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
Paper50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
PaperBackside sputter depth profiling of phosphorus diffusion from a polysilicon source
- P.A. Ronsheim
- D. Chidambarrao
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paper