High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Conference paper
Publications
6 results for H.-K. Lee
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Conference paperHigh performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Conference paperHigh performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Conference paperInteraction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliability
- K.Y. Lim
- V. Chan
- et al.
- 2005
- ESSDERC 2005
Conference paperDual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Conference paper