Publications

6 results for Z. Li

High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
Conference paper
Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- - Ruqiang Bao
  - Brian Greene
  - et al.
- 2015
- IEDM 2015
Conference paper
Low resistivity tungsten for 32 nm node MOL contacts and beyond
- - Filippos Papadatos
  - Keith Wong
  - et al.
- 2012
- Microelectronic Engineering
Paper
Characterization of novel TiN/HfO₂ metal insulator semiconductor stack for 32nm eDRAM
- - Puneet Goyal
  - Sneha Gupta
  - et al.
- 2010
- IEEE International SOI Conference 2010
Conference paper
A 0.039um² high performance eDRAM cell based on 32nm high-K/metal SOI technology
- - Nauman Z. Butt
  - Kevin McStay
  - et al.
- 2010
- IEDM 2010
Conference paper
Advanced metallization developments for 32-nm node CMOS technology contact architecture
- - Doug H. Lee
  - Valli Arunachalam
  - et al.
- 2009
- ADMETA 2009
Conference paper