Functional Testing of AI Cores through Thinned 3D I/O Buffer Dies in 3D Die-Stacked Modules
- Mukta Farooq
- Arvind Kumar
- et al.
- 2022
- ECTC 2022
Conference paper
Publications
10 results for V. Sardesai
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Conference paper10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014
Conference paperHigh performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
Conference paperAssessment of fully-depleted planar CMOS for low power complex circuit operation
- Zhibin Ren
- S. Mehta
- et al.
- 2011
- IEDM 2011
Conference paperBlanket SMT with in situ N2 plasma treatment on the lang;100〉 wafer for the low-cost low-power technology application
- Jun Yuan
- Victor Chan
- et al.
- 2009
- IEEE Electron Device Letters
PaperA 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Conference paperA 45nm low cost low power platform by using integrated dual-stress-liner technology
- J. Yuan
- S.S. Tan
- et al.
- 2006
- VLSI Technology 2006
Conference paperHigh yielding self-aligned contact-process for a 0.150-μm DRAM technology
- Thomas S. Rupp
- David Dobuzinsky
- et al.
- 2002
- IEEE Trans Semicond Manuf
PaperEvaluation of Cu wiring in a production 64 Mb DRAM
- W. Cote
- G. Costrini
- et al.
- 1998
- VLSI Technology 1998
Conference paper