Mapping active dopants in single silicon nanowires using off-axis electron holography
- Martien I. Den Hertog
- Heinz Schmid
- et al.
- 2009
- Nano Letters
Paper
Publications
106 results for Siegfried Karg
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- ULIS 2009
Conference paperDoping limits of grown in situ doped silicon nanowires using phosphine
- Heinz Schmid
- Mikael T. Björk
- et al.
- 2009
- Nano Letters
PaperTransition-metal-oxide-based resistance-change memories
- Siegfried F. Karg
- G. Ingmar Meijer
- et al.
- 2008
- IBM J. Res. Dev
PaperNanoscale resistive memory device using SrTiO3 films
- S. Karg
- G.I. Meijer
- et al.
- 2007
- NVSMW 2007
Conference paperRole of oxygen vacancies in cr-doped SrTiO3 for resistance-change memory
- Markus Janousch
- G. Ingmar Meijer
- et al.
- 2007
- Advanced Materials
PaperFully depleted nanowire field-effect transistor in inversion mode
- Oliver Hayden
- Mikael T. Björk
- et al.
- 2007
- Small
PaperElectrical-stress-induced conductivity increase in SrTiO3 films
- S. Karg
- G.I. Meijer
- et al.
- 2006
- Applied Physics Letters
PaperTuning optoelectronic properties of ambipolar organic light-emitting transistors using a bulk-heterojunction approach
- Maria Antonietta Loi
- Constance Rost-Bietsch
- et al.
- 2005
- Advanced Functional Materials
PaperRealization of a silicon nanowire vertical surround-gate field-effect transistor
- Volker Schmidt
- Heike Riel
- et al.
- 2005
- Small
Paper