Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
- D. Singh
- P. Solomon
- et al.
- 2004
- IEDM 2004
Conference paper
Publications
47 results for Zhibin Ren
Inversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003
Conference paperDevice Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperRecent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Conference paperSix-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- M.V. Fischetti
- Z. Ren
- et al.
- 2003
- Journal of Applied Physics
ReviewExamination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Conference paperExtreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Conference paper