p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
Paper
Publications
101 results for Steven J. Koester
High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
PaperHigh-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters
PaperDetermination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
Paper1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
- S.J. Koester
- B.-U. Klepser
- et al.
- 1998
- DRC 1998
Conference paperNegative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
PaperOperation of a novel negative differential conductance transistor fabricated in a strained Si quantum well
- S.J. Koester
- K. Ismail
- et al.
- 1997
- IEEE Electron Device Letters
PaperNovel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor
- S.J. Koester
- K. Ismail
- et al.
- 1997
- DRC 1997
Conference paperNegative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
PaperElectrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
Paper