Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- R.R. Yu
- F. Liu
- et al.
- 2009
- VLSI Technology 2009
Conference paper
Publications
101 results for Steven J. Koester
Undoped-body extremely thin SOI MOSFETs with back gates
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperLow-frequency noise in buried-channel SiGe n-MODFETs
- Anuj Madan
- John D. Cressler
- et al.
- 2009
- Solid-State Electronics
PaperGate length and performance scaling of undoped-body extremely thin SOI MOSFETs
- Amlan Majumdar
- Xinlin Wang
- et al.
- 2009
- IEEE Electron Device Letters
PaperDC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs
- S.W. Bedell
- A. Majumdar
- et al.
- 2008
- DRC 2008
Conference paperA 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
Conference paperMobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
- Stephen W. Bedell
- Amlan Majumdar
- et al.
- 2008
- IEEE Electron Device Letters
PaperHigh-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters
PaperEffect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
Conference paperProgrammable via using indirectly heated phase-change switch for reconfigurable logic applications
- Ku N. Chen
- L. Krusin-Elbaum
- et al.
- 2008
- IEEE Electron Device Letters
Paper