Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
Conference paper
Publications
101 results for Steven J. Koester
High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
PaperSpin-based quantum dot quantum computing in silicon
- Mark A. Eriksson
- Mark Friesen
- et al.
- 2004
- Quantum Information Processing
PaperHigh speed, lateral PIN photodiodes in silicon technologies
- Jeremy D. Schaub
- Steven J. Koester
- et al.
- 2004
- SPIE IOPTO 2004
Conference paperHigh-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Conference paperFabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Conference paper80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
PaperImplications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
Conference paperStatic frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
PaperIntegrated SiGe and Si device capabilities and trends for multi-gigahertz applications
- G. Freeman
- B. Jagannathan
- et al.
- 2003
- International Journal of High Speed Electronics and Systems
Paper