SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- Applied Physics Letters
Paper
Publications
101 results for Steven J. Koester
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
PaperComparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- Wu Lu
- Steven J. Koester
- et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperHigh performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
PaperLow-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
Conference paperSilicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
Conference paperHigh-frequency noise performance of SiGe p-channel MODFETs
- S.J. Koester
- J.O. Chu
- et al.
- 2000
- Electronics Letters
PaperExtremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
PaperHigh transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
PaperHigh-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
Conference paper