Development of SiGe Indentation Process Control to Enable Stacked Nanosheet FET Technology
- Dexin Kong
- Daniel Schmidt
- et al.
- 2020
- ASMC 2020
Conference paper
Publications
16 results for J. Frougier
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- VLSI Technology 2020
Conference paperA Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices
- Nicolas Loubet
- T. Devarajan
- et al.
- 2019
- IEDM 2019
Conference paperFull Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- J. Zhang
- S. Pancharatnam
- et al.
- 2019
- IEDM 2019
Conference paperChannel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Conference paperStacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Conference paper