A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paper
Publications
162 results for Cyril Cabral
Tunable Workfunction for Fully Silicied Gates (FUSI) and Proposed Mechanisms
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2006
- VLSI-TSA 2006
Conference paperEffects of additive elements on the phase formation and morphological stability of nickel monosilicide films
- C. Lavoie
- C. Detavernier
- et al.
- 2006
- Microelectronic Engineering
PaperOn the use of alloying elements for Cu interconnect applications
- K. Barmak
- C. Cabral
- et al.
- 2006
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ReviewSystematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
Conference paperOptimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Conference paperAluminum mobility and interfacial segregation in fully silicided gate contacts
- R.P. Pezzi
- M. Copel
- et al.
- 2005
- Applied Physics Letters
PaperInterfacial segregation of dopants in fully silicided metal-oxide- semiconductor gates
- M. Copel
- R.P. Pezzi
- et al.
- 2005
- Applied Physics Letters
PaperPhysical and electrical analysis of Rux Yy alloys for gate electrode applications
- Bei Chen
- Youseok Suh
- et al.
- 2005
- Applied Physics Letters
PaperThreshold voltage control in NiSi-Gated MOSFETs through SIIS
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2005
- IEEE Transactions on Electron Devices
Paper