Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface
- E. Cartier
- J.H. Stathis
- 1996
- Applied Physics Letters
Paper
Publications
182 results for Eduard Cartier
Anode hole injection and trapping in silicon dioxide
- D.J. DiMaria
- E. Cartier
- et al.
- 1996
- Journal of Applied Physics
PaperImaging hot-electron emission from metal-oxide-semiconductor structures
- Marián Maňkoš
- R.M. Tromp
- et al.
- 1996
- Physical Review Letters
PaperStressing and high field transport studies on device-grade SiO2 by ballistic electron emission spectroscopy
- R. Ludeke
- H.J. Wen
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperHot electron transport through metal-oxide-semiconductor structure studied by ballistic electron emission spectroscopy
- R. Ludeke
- A. Bauer
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperAtomic hydrogen-induced degradation of thin SiO2 gate oxides
- E. Cartier
- D.A. Buchanan
- et al.
- 1995
- Journal of Non-Crystalline Solids
PaperHot electron transport in SiO2 probed with a scanning tunnel microscope
- R. Ludeke
- A. Bauer
- et al.
- 1995
- Applied Physics Letters
PaperMechanism for stress-induced leakage currents in thin silicon dioxide films
- D.J. Dimaria
- E. Cartier
- 1995
- Journal of Applied Physics
PaperAtomic hydrogen-induced degradation of the Si SiO2 structure
- E. Cartier
- J.H. Stathis
- 1995
- Microelectronic Engineering
PaperAnomalous positive charge formation by atomic hydrogen exposure
- R.E. Stahlbush
- E. Cartier
- et al.
- 1995
- Microelectronic Engineering
Paper