Impact of instrumental current scatter on fast Bias Temperature Instability testing
- A. Kerber
- K. Zhao
- et al.
- 2009
- IIRW 2009
Conference paper
Publications
182 results for Eduard Cartier
Interaction of La2O3 capping layers with HfO 2 gate dielectrics
- M. Copel
- S. Guha
- et al.
- 2009
- Applied Physics Letters
PaperExtremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Conference paperThe effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
- Barry P. Linder
- Eduard Cartier
- et al.
- 2009
- IRPS 2009
Conference paperEffects of photoinduced carrier injection on time-dependent dielectric breakdown
- J.M. Atkin
- R.B. Laibowitz
- et al.
- 2009
- IRPS 2009
Conference paperTDDB failure distribution of metal gate / high-k CMOS devices on SOI substrates
- A. Kerber
- E. Cartier
- et al.
- 2009
- IRPS 2009
Conference paperStress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress
- Eduard Cartier
- Andreas Kerber
- 2009
- IRPS 2009
Conference paperOxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices
- E. Cartier
- M. Hopstaken
- et al.
- 2009
- Applied Physics Letters
PaperThe evolution of optical and electrical properties of low-k dielectrics under bias stress
- J.M. Atkin
- E. Cartier
- et al.
- 2009
- Microelectronic Engineering
PaperQuasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
Paper