Strain engineering in functional materials
- G. Tsutsui
- Shogo Mochizuki
- et al.
- 2019
- AIP Advances
Review
Publications
59 results for Nicolas Loubet
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Conference paperAdvanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Conference paperChannel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Conference paperStrain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters
PaperHighly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
Conference paperStacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Conference paperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paperFINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Conference paperAdvanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- R. Muthinti
- Nicolas Loubet
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paper