Selective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
Paper
Publications
75 results for Dave Harame
Nonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
PaperElectrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- David Harame
- Barry Ginsberg
- et al.
- 1987
- Solid State Electronics
PaperCHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Conference paperIMPLANTABLE ION-SENSITIVE TRANSISTORS.
- D.L. Harame
- J.D. Shott
- et al.
- 1983
- EMBC 1983
Conference paper