Electronic states due to surface doping: Si(111)3×3B
- Efthimios Kaxiras
- K.C. Pandey
- et al.
- 1990
- Physical Review B
Paper
Publications
30 results for Efthimios Kaxiras
Optimized pseudopotentials
- Andrew M. Rappe
- Karin M. Rabe
- et al.
- 1990
- Physical Review B
PaperAdsorption of boron on Si(111): Physics, chemistry, and atomic-scale electronic devices
- Ph. Avouris
- In-Whan Lyo
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperOn the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces
- Efthimios Kaxiras
- J.D. Joannopoulos
- 1989
- Surface Science
PaperStructural model for a covalently bonded Si45 cluster
- Efthimios Kaxiras
- 1989
- Chemical Physics Letters
PaperScanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface
- C.K. Shih
- Efthimios Kaxiras
- et al.
- 1989
- Physical Review B
PaperAdsorption of boron on Si(111): Its effect on surface electronic states and reconstruction
- I.-W. Lyo
- Efthimios Kaxiras
- et al.
- 1989
- Physical Review Letters
PaperSurfactants in epitaxial growth
- M. Copel
- M.C. Reuter
- et al.
- 1989
- Physical Review Letters
PaperReply to comment on ground state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study
- Efthimios Kaxiras
- Efstratios Manousakis
- 1989
- Physical Review B
PaperMicroscopic model of heteroepitaxy of GaAs on Si(100)
- Efthimios Kaxiras
- O.L. Alerhand
- et al.
- 1989
- Physical Review Letters
Paper