Experimental study of gate-first finfet threshold-voltage mismatch
- Qintao Zhang
- Cindy Wang
- et al.
- 2014
- IEEE T-ED
Paper
Publications
6 results for Qintao Zhang
GIDL in doped and undoped FinFET devices for low-leakage applications
- Pranita Kerber
- Qintao Zhang
- et al.
- 2013
- IEEE Electron Device Letters
PaperSelf-annealing effect of tensile liner on thick-Tinv PMOS
- Qintao Zhang
- Jie Chen
- et al.
- 2011
- IEEE T-ED
PaperPerformance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
Conference paperCompetitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
Conference paper32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
Conference paper