Plasma post-oxidation for high mobility strained-Ge pFETs with aggressively scaled high-κ dielectrics
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- ECSSMEQ 2014
Conference paper
Publications
10 results for Masaharu Kobayashi
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
PaperTowards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
PaperSelf-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paperStatistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
- H. Miki
- N. Tega
- et al.
- 2012
- IEDM 2012
Conference paperUnderstanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
- Hiroshi Miki
- M. Yamaoka
- et al.
- 2011
- VLSI Technology 2011
Conference paperOn the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor
- Masaharu Kobayashi
- Jin Cai
- et al.
- 2011
- Applied Physics Letters
PaperOn the high-field transport and uniaxial stress effect in Ge PFETs
- Masaharu Kobayashi
- Jérǒme Mitard
- et al.
- 2011
- IEEE T-ED
PaperContact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface
- Zihong Liu
- Masaharu Kobayashi
- et al.
- 2010
- Physical Review B - CMMP
PaperFermi level depinning at metal-organic semiconductor interface for low-resistance ohmic contacts
- Zihong Liu
- Masaharu Kobayashi
- et al.
- 2009
- IEDM 2009
Conference paper