Publications

92 results for John Bruley

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
Conference paper
High-mobility high-Ge-content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Circuits 2015
Conference paper
High-mobility High-Ge-Content Si_1-xGe_x-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2015
- VLSI Technology 2015
Conference paper
III-V device integration on Si using template-assisted selective epitaxy
- - Heinz Schmid
  - Mattias Borg
  - et al.
- 2015
- DRC 2015
Conference paper
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- - Heinz Schmid
  - Mattias Borg
  - et al.
- 2015
- Applied Physics Letters
Paper
Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility
- - Ruqiang Bao
  - Brian Greene
  - et al.
- 2015
- IEDM 2015
Conference paper
Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
- - Yun-Yu Wang
  - David Cooper
  - et al.
- 2015
- Applied Physics Letters
Paper
Strain-driven mound formation of substrate under epitaxial nanoparticles
- - Tanya Gupta
  - James B. Hannon
  - et al.
- 2014
- Nano Letters
Paper
Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond
- - Takashi Ando
  - B. Kannan
  - et al.
- 2014
- VLSI Technology 2014
Conference paper
Incorporation of la in epitaxial SrTiO₃ thin films grown by atomic layer deposition on SrTiO₃-buffered Si (001) substrates
- - Martin D. McDaniel
  - Agham Posadas
  - et al.
- 2014
- Journal of Applied Physics
Paper