Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Paper
Publications
92 results for John Bruley
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
PaperMaximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
PaperEpitaxial SrO interfacial layers for HfO2 -Si gate stack scaling
- Chiara Marchiori
- Martin M. Frank
- et al.
- 2011
- Applied Physics Letters
PaperThe impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Conference paperEffective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Conference paperSharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
PaperPhysical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
PaperOxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
PaperUltimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Conference paper