Backscattered electron imaging in the scanning electron microscope: The use of either: (A) high incident energy or (b) an array detector
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- O.C. Wells
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- Microscopy and Microanalysis
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Publications
92 results for John Bruley
Novel lithography-independent pore phase change memory
- M. Breitwisch
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- 2007
- VLSI Technology 2007
Conference paperExtendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
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- 2007
- IEDM 2007
Conference paperEvidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
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- 2007
- Applied Physics Letters
PaperUse of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope
- Oliver C. Wells
- L. Gignac
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- Scanning
PaperNitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
- P.D. Kirsch
- D.-G. Park
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- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperThermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
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- 2004
- VLSI Technology 2004
Conference paperHigh-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
- S. Guha
- E. Cartier
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- 2001
- Journal of Applied Physics
PaperCleans for Al vias in a 0.175 μm Dual Damascene Process
- J.P. Gambino
- L. Clevenger
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- 1999
- IITC 1999
Conference paperProperties of amorphous diamond films prepared by a filtered cathodic arc
- Richard Lossy
- David L. Pappas
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- 1995
- Journal of Applied Physics
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