Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation
- Xiaojun Yu
- Shu-Jen Han
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
53 results for Ken Rim
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
- Shu-Jen Han
- Xinlin Wang
- et al.
- 2008
- IEDM 2008
Conference paperA new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2008
- IEEE Transactions on Electron Devices
PaperSOI CMOS technology with 360GHz fT NFET, 260GHz fT PFET, and record circuit performance for millimeter-wave digital and analog system-on-chip applications
- Sungjae Lee
- Jonghae Kim
- et al.
- 2007
- VLSI Technology 2007
Conference paperStrained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Conference paperIntegration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Conference paperDesign of high performance PFETs with strained Si channel and laser anneal
- Z. Luo
- Y.F. Chong
- et al.
- 2005
- IEDM 2005
Conference paperSimulation analysis of series resistance for SOI MOSFET in nanometer regime
- Xinlin Wang
- Phil Oldiges
- et al.
- 2005
- SISPAD 2005
Conference paperAn integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2005
- IEDM 2005
Conference paperHigh performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Conference paper