Publications

6 results for Andreas Scholze

Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET
- - Vishal A. Tiwari
  - Andreas Scholze
  - et al.
- 2014
- ICEE 2014
Conference paper
Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
- - Darsen Lu
  - Pierre Morin
  - et al.
- 2014
- ECSSMEQ 2014
Conference paper
10nm FINFET technology for low power and high performance applications
- - D. Guo
  - H. Shang
  - et al.
- 2014
- ICSICT 2014
Conference paper
Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- - Bomsoo Kim
  - Dong-Il Bae
  - et al.
- 2013
- IEEE Electron Device Letters
Paper
Exploring MOL design options for a 20nm CMOS technology using TCAD
- - Andreas Scholze
  - Stephen Furkay
  - et al.
- 2011
- SISPAD 2011
Conference paper
Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
- - Seong-Dong Kim
  - Sameer Jain
  - et al.
- 2010
- SISPAD 2010
Conference paper