Microstructure modulation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IITC 2017
Conference paper
Publications
55 results for T. Standaert
Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
Conference paperElectronic and structural analysis of ultra-small-diameter metal disilicide nanowires
- Nicholas A. Lanzillo
- T. Standaert
- et al.
- 2017
- Journal of Applied Physics
PaperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paperVia resistance reduction in advanced copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IEEE Electron Device Letters
PaperPost porosity plasma protection integration at 48 nm pitch
- H. Huang
- Krystelle Lionti
- et al.
- 2016
- IITC/AMC 2016
Conference paperInterconnect performance and scaling strategy at the 5 nm Node
- James H.-C. Chen
- N.V. Licausi
- et al.
- 2016
- IITC/AMC 2016
Conference paperPre-liner dielectric nitridation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2016
- IITC/AMC 2016
Conference paperBEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Conference paperSi nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015
Conference paper