Evaluation of Cu CMP barrier slurries for Ultra Low-k dielectric film (k~2.4) for 45nm technology
- Feng Zhao
- Laertis Economikos
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- 2007
- ICPT 2007
Conference paper
Publications
55 results for T. Standaert
Characterization, Modeling and Extraction of Cu Wire Resistance for 65 nm Technology
- Ning Lu
- M. Angyal
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- 2007
- CICC 2007
Conference paperHigh performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Conference paperA 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Conference paperFabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching
- Y. Hsu
- T. Standaert
- et al.
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper