A 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020
Conference paper
Publications
3 results for D. Houssameddine
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Conference paperReliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Paper