Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer
- Rajas Mathkari
- Maximilian Liehr
- et al.
- 2025
- Materials Science in Semiconductor Processing
Paper
Publications
6 results for Sandra Schujman
Three Programming States in Bilayer Ga-Sb Phase Change Memory With AlOxDiffusion Barrier
- Haibo Gong
- Rubab Ume
- et al.
- 2023
- Applied Physics Letters
PaperElectrical and structural properties of binary Ga-Sb phase change memory alloys
- Rubab Ume
- Haibo Gong
- et al.
- 2022
- Journal of Applied Physics
PaperCrystallization Properties of Al-Sb Alloys for Phase Change Memory Applications
- Rubab Ume
- Haibo Gong
- et al.
- 2021
- ECS J. Solid State Sci. Technol.
PaperBilayer Ga-Sb Phase Change Memory with Intermediate Resistance State
- Haibo Gong
- Rubab Ume
- et al.
- 2021
- DRC 2021
Conference paperQuantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2films
- Vineetha Mukundan
- Steven Consiglio
- et al.
- 2020
- Applied Physics Letters
Paper