Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Paper
Publications
75 results for Christopher P. D’Emic
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paperUltrathin high-K metal oxides on silicon: Processing, characterization and integration issues
- E. Gusev
- E. Cartier
- et al.
- 2001
- Microelectronic Engineering
Conference paperCarrier mobility enhancement in strained Si-On-Insulator fabricated by wafer bonding
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- VLSI Technology 2001
Conference paperSiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- Applied Physics Letters
PaperUltrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
PaperTriple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
PaperCharacterization of DI water/O3 oxidation of Si (100) and Si (111) surfaces by OCP measurements
- H. Okorn-Schmidt
- C. D'Emic
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena
Conference paperPreparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
Conference paper80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Conference paper