Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
- M.V. Fischetti
- S.E. Laux
- 2001
- Journal of Applied Physics
Paper
Publications
88 results for S.E. Laux
Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation
- M.V. Fischetti
- S.E. Laux
- 2000
- MSM 2000
Conference paperPerformance degradation of small silicon devices caused by long-range Coulomb interactions
- M.V. Fischetti
- S.E. Laux
- 2000
- Applied Physics Letters
PaperRevisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices
PaperIssues in modeling small devices
- S.E. Laux
- M.V. Fischetti
- 1999
- IEDM 1999
Conference paperComment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]
- M.V. Fischetti
- S.E. Laux
- 1999
- Journal of Applied Physics
ReviewHole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
- N. Sano
- M.V. Fischetti
- et al.
- 1998
- IWCE 1998
Conference paperMonte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter
- S.E. Laux
- M.V. Fischetti
- 1997
- IEDM 1997
Conference paperOn particle-mesh coupling in monte carlo semiconductor device simulation
- Steven E. Laux
- 1996
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
PaperMonte Carlo simulation of electron transport in Si: The first 20 years
- M.V. Fischetti
- S.E. Laux
- 1996
- ESSDERC 1996
Conference paper