Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs
- M.V. Fischetti
- N. Sano
- et al.
- 1996
- SISPAD 1996
Conference paper
Publications
88 results for S.E. Laux
Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys
- M.V. Fischetti
- S.E. Laux
- 1996
- Journal of Applied Physics
PaperModeling effects of focused ion beams
- F. Stern
- S.E. Laux
- et al.
- 1996
- Solid-State Electronics
PaperTransport models for advanced device simulation - truth or consequences?
- S.E. Laux
- M.V. Fischetti
- 1995
- BCTM 1995
Conference paperMonte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors
- M.V. Fischetti
- S.E. Laux
- 1995
- IEDM 1995
Conference paperUnderstanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
Papermcplotgl: Graphics for the DAMOCLES Program
- S.E. Laux
- M.V. Fischetti
- 1994
- IEDM 1994
Conference paperEffect of nonequilibrium deep donors in heterostructure modeling
- Arvind Kumar
- Steven E. Laux
- et al.
- 1993
- Physical Review B
PaperMonte Carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1993
- Physical Review B
PaperMonte carlo simulations of p- And n-channel dual-gate Si MOSFETs at the limits of scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- Device Research Conference 1993
Conference paper