Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Conference paper
Publications
94 results for Richard Haight
pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Conference paperProbing electronic properties of molecular engineered zinc oxide nanowires with photoelectron spectroscopy
- Carlos A. Aguilar
- Richard Haight
- et al.
- 2009
- ACS Nano
PaperControlling the electronic properties of silicon nanowires with functional molecular groups
- Richard Haight
- Lidija Sekaric
- et al.
- 2009
- Nano Letters
PaperGrowth system, structure, and doping of aluminum-seeded epitaxial silicon nanowires
- Brent A. Wacaser
- Mark C. Reuter
- et al.
- 2009
- Nano Letters
PaperPhotoelectron spectroscopy of individual nanowires of Si and Ge
- Richard Haight
- George Sirinakis
- et al.
- 2007
- Applied Physics Letters
PaperGeneration of 193-nm femtosecond light pulses and their application to photomask repair
- D. Lim
- R. Haight
- 2007
- Journal of the Korean Physical Society
PaperImage potential states seen via two-photon photoemission and second harmonic generation
- K. Giesen
- F. Hage
- et al.
- 2006
- Physica Scripta
PaperRole of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Conference paperIn situ photovoltage measurements using femtosecond pump-probe photoelectron spectroscopy and its application to metal-HfO 2-Si structures
- Daeyoung Lim
- Richard Haight
- 2005
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper