CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Conference paper
Publications
106 results for Ghavam Shahidi
SOI series MOSFET for embedded high voltage applications and soft-error immunity
- Jin Cai
- Tak Ning
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paperLow-k spacers for advanced low power CMOS devices with reduced parasitic capacitances
- Elbert Huang
- Eric Joseph
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paperScaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008
Conference paperHigh performance long- and short-channel in0.7ga 0.3as-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- DRC 2008
Conference paperDevice scaling of high performance MOSFET with metal gate high-K at 32nm technology node and beyond
- Xinlin Wang
- Ghavam Shahidi
- et al.
- 2008
- SISPAD 2008
Conference paperHigher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Conference paperExtendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Conference paperEffect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Conference paperInversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Paper