Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Conference paper
Publications
106 results for Ghavam Shahidi
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Conference paperEvolution of CMOS Technology at 32 nm and beyond
- Ghavam G. Shahidi
- 2007
- CICC 2007
Conference paperUniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Conference paperDirect silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperIntegration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Conference paperSilicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Conference paperOptimizing CMOS technology for maximum performance
- David J. Frank
- Wilfried Haensch
- et al.
- 2006
- IBM J. Res. Dev
PaperAre we at the end of CMOS scaling?
- Ghavam G. Shahidi
- 2006
- International Journal of High Speed Electronics and Systems
Conference paper