Estimation of amorphous fraction in multilevel phase change memory cells
- 2009
- ESSDERC 2009
Conference paper
Publications
38 results for Matthew Breitwisch
Characterization of poly-silicon emitter BJTs as access devices for phase change memory
- B. Rajendran
- M. Breitwisch
- et al.
- 2009
- VLSI-TSA 2009
Conference paperUnderstanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Conference paperEndurance improvement of Ge2Sb2Te5-based phase change memory
- Chieh-Fang Chen
- A.G. Schrott
- et al.
- 2009
- IMW 2009
Conference paperDynamic resistance - A metric for variability characterization of phase-change memory
- Bipin Rajendran
- Matt Breitwisch
- et al.
- 2009
- IEEE Electron Device Letters
PaperMechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Conference paperAnalytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
Conference paperPhase-change random access memory: A scalable technology
- Simone Raoux
- Geoffrey W. Burr
- et al.
- 2008
- IBM J. Res. Dev
PaperOn the dynamic resistance and reliability of phase change memory
- B. Rajendran
- M.H. Lee
- et al.
- 2008
- VLSI Technology 2008
Conference paperPhase change memory
- Matthew J. Breitwisch
- 2008
- IITC 2008
Conference paper