Dopant measurements in semiconductors with atom probe tomography
- P.A. Ronsheim
- M. Hatzistergos
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Paper
Publications
48 results for Paul Ronsheim
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
Conference paperElectron holography for 2-D dopant profiling
- Michael A. Gribelyuk
- Jun Yuan
- et al.
- 2009
- IWJT 2009
Conference paperTowards routine backside SIMS sample preparation for efficient support of advanced IC process development
- M. Hopstaken
- C. Cabral Jr.
- et al.
- 2009
- FCMN 2009
Conference paperImpurity measurements in silicon with D-SIMS and atom probe tomography
- P.A. Ronsheim
- P. Flaitz
- et al.
- 2008
- Applied Surface Science
PaperHigher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Conference paperUltra-thin SOI CMOS using laser spike anneal
- Zhibin Ren
- J. Sleight
- et al.
- 2006
- VLSI-TSA 2006
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperCharge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Conference paperSynthesis and control of ultra thin gate oxides for the 90 and 65 NM nodes
- Joseph F. Shepard Jr.
- Anthony Chou
- et al.
- 2005
- RTP 2005
Conference paper